data sheet description the l 2s c 3356 wt1 is an n p n silicon epitaxial transistor designed for low noise amplifier at vhf, uhf and catv band. it has dynamic range and good current characteristic. features ? low noise and high gain nf = 1.1 db typ., g a = 11 db typ. @v ce = 10 v, i c = 7 ma, f = 1.0 ghz ? high power gain mag = 13 db typ. @v ce = 10 v, i c = 20 ma, f = 1.0 ghz absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current i c 100 ma total power dissipation p t 150 mw junction temperature t j 150 c storage temperatur e t st g 65 to +15 0 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1.0 v, i c = 0 dc current gai n h f e 82 170 270 v ce = 3 v, i c = 10 ma gain bandwidth product f t 7 ghz v ce = 10 v, i c = 20 ma feed-back capacitance c re ** 0.55 1.0 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21 e 2 11.5 db v ce = 10 v, i c = 20 ma, f = 1.0 ghz noise figure nf 1.1 2.0 db v ce = 10 v, i c = 7 ma, f = 1.0 ghz * pulse measurement pw 350 s, duty cycle 2 % * the emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. leshan radio company, ltd. L2SC3356WT1G ? we declare that the material of product compliance with rohs requirements. ordering information device marking shipping L2SC3356WT1G 3000/tape & reel 24 10000/tape & reel 24 l2sc3356wt3g s c-70 1 3 2 rev.o 1/4
typical characteristics (t a = 25 c) total power dissipation vs. ambient temperature 200 100 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-mw h fe -dc current gain v ce = 10 v 0 5 10 15 0.5 1 5 10 50 70 i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db v ce = 10 v f = 1.0 ghz 0.3 0.5 1 2 0 0.5 1 2 5 10 20 30 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 mhz 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0 0.5 1.0 105.0 30 i c -collector current-ma gain bandwidth product vs. collector current f t -gain bandwidth product-mhz v ce = 10 v 0 10 20 0.1 0.2 0.4 0.6 0.81.0 2 f-frequency-ghz insertion gain, maximum gain vs. frequency g max -maximum gain-db |s 21e | 2 -insertion gain-db v ce = 10 v i c = 20 ma g max |s 21e | 2 free air leshan radio company, ltd. L2SC3356WT1G rev.o 2/4
0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 10 v f = 1.0 ghz 5 4 3 2 1 0 18 15 12 6 3 0 246810 v ce -collector to emitter voltage-v noise figure, forward insertion gain vs. collector to emitter voltage nf-noise figure-db |s 21e | 2 -insertion gain-db f = 1.0 ghz i c = 20 ma |s 21e | 2 nf leshan radio company, ltd. L2SC3356WT1G rev.o 3/4
L2SC3356WT1G leshan radio company, ltd. sc - 70 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev.o 4/4
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